Pn2222 transistor bs1709/9/2023 ![]() ![]() ![]() To get long term and stable performance from BS170 MOSFET in your circuits do not drive load of more than 60V and 500mA. And the gate in MOSFETs requires small amount of voltage to control current through its Drain to Source. In MOSFETs the Gate is used to control the transistor where as in BJT it is Base, but the BJTs are current control devices and MOSFETs are voltage control devices. ![]() Wiring the MOSFETs are almost same as we wire BJT transistors. On the other hand it can also be used as an audio amplifier, in audio amplifier stages, low level signal amplification etc. Additionally it can also be used at the output of microcontrollers and platforms like arduino and raspberry pi to drive loads. ![]() Other than that it can also be used as an amplifier and you can use it in your audio amplifier circuits and also for any general purpose signal amplification requirements.īS170 can be used for any general purpose switching and amplification purposes, it can be used as a switch to drive loads under 500mA which is enough drain current to drive most of the relays, lamps, LEDs etc. It can also perform well on low voltage due to which it is an ideal MOSFET to use in portable and battery operated applications. It is able to perform fast switching and capable to switch load in around 7 nanoseconds due to which it can be used in high speed circuits. When used as switch it can drive load of 500mA. It can be used for both switching and amplification purposes. Max Storage & Operating temperature Should Be: -55 to +150 CelsiusĢN7000, 2N7002, IRFZ44 (The pin configurations of the substitute MOSFETs shown here may be different from BS170, therefore it is recommended to check their pin configurations before replacing in your circuit).īS170 is a well-known N channel MOSFET manufactured in TO-92 package.Minimum Voltage Required to Conduct: 0.8V.Max Gate to Source Voltage Should Be: ± 20V.Max Voltage Applied From Drain to Source: 60V.The reason is due to the current gain in reverse-active is much lower than the forward-active. If that is the case, you either lower down the base resistor or increase the pull-up resistor on the 3.3V leg to keep it low. In this configuration, the problem is normally that the low output voltage on the 3.3V leg may be a bit high. When only SW2 is closed, the transistor will be in reverse-active, i.e., the charges flow from emitter to collector. When only SW1 is closed, the transistor will be in forward-active, i.e., the charges flow from collector to emitter (you can see this animated in the simulator). It works because the BJT can operate not only in forward-active mode, but also in reverse-active mode. Watch the voltages on the voltmeters when you play around with the switches. You can switch them on/off in real-time to see the effect. I have created a circuit that runs under Falstad Circuit Simulator. To prove that, you can either build it yourself a prototype or simulate it. It is useful if you don't have MOSFET handy (like what the OP had encountered) and need a quick solution. I know it is an old question, but I want to point out that BJT transistor can work just fine except that it might not be as efficient or as fast as the low VG(th) MOSFET solution. ![]()
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